1.3a, 100v, 0.300 Ohm, N-channel Power Mosfet Corporation

This advanced Power MOSFET IRFD120 is designed, tested, and guaranteed to withstand a specied level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon Gate power eld effect Transistors designed for applications such as switching Regulators switching convertors, Motor Drivers Relay Drivers and drivers for high power bipolar switching Transistors requiring high speed and low Gate drive power. They CAN be operated directly from integrated circuits. Formerly developmental type TA17401. By Intersil Corporation
IRFD120 's PackagesIRFD120 's pdf datasheet



IRFD120 Pinout, Pinouts
IRFD120 pinout,Pin out
This is one package pinout of IRFD120,If you need more pinouts please download IRFD120's pdf datasheet.

IRFD120 Application circuits
IRFD120 circuits
This is one application circuit of IRFD120,If you need more circuits,please download IRFD120's pdf datasheet.


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