0.6a, 200v, 1.500 Ohm, N-channel Power Mosfet Corporation

This advanced Power MOSFET IRFD210 is designed, tested, and guaranteed to withstand a specied level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon Gate power eld effect Transistors designed for applications such as switching Regulators switching converters, Motor Drivers Relay Drivers and drivers for high power bipolar switching Transistors requiring high speed and low Gate drive power. They CAN be operated directly from integrated circuits. Formerly developmental type TA17442. By Intersil Corporation
IRFD210 's PackagesIRFD210 's pdf datasheet

IRFD210 Pinout, Pinouts
IRFD210 pinout,Pin out
This is one package pinout of IRFD210,If you need more pinouts please download IRFD210's pdf datasheet.

IRFD210 Application circuits
IRFD210 circuits
This is one application circuit of IRFD210,If you need more circuits,please download IRFD210's pdf datasheet.

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