HEXFET® Power MOSFET Third Generation HEXFETs IRFZ34 from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. By LTO-DMS Semiconductors

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• IRFZ24, HEXFET® Power MOSFET
• IRFZ14, HEXFET® Power MOSFET
• IRF234, 8.1a And 6.5a, 275v And 250v, 0.45 And 0.68 Ohm, N-channel Power Mosfets
• IRF730, HEXFET® Power MOSFET
• IRF630, HEXFET® Power MOSFET
• HAT2045T, Silicon N Channel Power Mos Fet High Speed Power Switching - Hitachi Semiconductor
• STP3020L, N - Channel 30v - 0.019ohm - 40a - To-220 Stripfet Power Mosfet
• MTD20N06V, Tmos Power Fet 20 Amperes 60 Volts Rds(on) = 0.080 Ohm , Inc
• SI3457DV, Single P-Channel Logic Level PowerTrench MOSFET
• IRF1405ZL, Automotive Mosfet -
• PHT1N60R, Powermos Transistor - Nxp Semiconductors
• IRF540NL, Power Mosfet(vdss=100v, Rds(on)=44mohm, Id=33a) - International Rectifier
• FQP1N60, QFET N-CHANNEL

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