Insulated Gate Bipolar Transistors, IGBTs

This IGBT IRG6I330UPBF is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSE TM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications. By International Rectifier Corp.
IRG6I330UPBF 's PackagesIRG6I330UPBF 's pdf datasheet



IRG6I330UPBF Pinout, Pinouts
IRG6I330UPBF pinout,Pin out
This is one package pinout of IRG6I330UPBF,If you need more pinouts please download IRG6I330UPBF's pdf datasheet.

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