Power Mosfet(vdss=30v, Rds(on)=0.010ohm, - International Rectifier

Power MOSFET IRLI2203G (vdss=30v, Rds(on)=0.010ohm, ,Fourth Generation HEXFETs IRLI2203G from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. By International Rectifier Corp.
IRLI2203G 's PackagesIRLI2203G 's pdf datasheet



IRLI2203G Pinout, Pinouts
IRLI2203G pinout,Pin out
This is one package pinout of IRLI2203G,If you need more pinouts please download IRLI2203G's pdf datasheet.

IRLI2203G Application circuits
IRLI2203G circuits
This is one application circuit of IRLI2203G,If you need more circuits,please download IRLI2203G's pdf datasheet.


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