Power Mosfet(vdss=200v, Rds(on)=0.18ohm, Id=9.9a) - International Rectifier

Power MOSFET IRLI640G (vdss=200v, Rds(on)=0.18ohm, Id=9.9a) - International Rectifier Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. By International Rectifier Corp.
IRLI640G 's PackagesIRLI640G 's pdf datasheet



IRLI640G Pinout, Pinouts
IRLI640G pinout,Pin out
This is one package pinout of IRLI640G,If you need more pinouts please download IRLI640G's pdf datasheet.

IRLI640G Application circuits
IRLI640G circuits
This is one application circuit of IRLI640G,If you need more circuits,please download IRLI640G's pdf datasheet.


Related Electronics Part Number

Related Keywords:

IRLI640G Pb-Free IRLI640G Cross Reference IRLI640G Schematic IRLI640G Distributor
IRLI640G Application Notes IRLI640G RoHS IRLI640G Circuits IRLI640G footprint