These P-Channel MOSFETs IRLMS6802PBF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The Micro6 package with its customized leadframe produces a HEXFET Power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. The unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. By International Rectifier Corp.
IRLMS6802PBF 's PackagesIRLMS6802PBF 's pdf datasheet

IRLMS6802PBF Pinout, Pinouts
IRLMS6802PBF pinout,Pin out
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