Power Mosfet(vdss=100v, Rds(on)=0.185ohm, Id=10a) - International Rectifier

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. By International Rectifier Corp.
IRLRU120N 's PackagesIRLRU120N 's pdf datasheet

IRLRU120N Pinout, Pinouts
IRLRU120N pinout,Pin out
This is one package pinout of IRLRU120N,If you need more pinouts please download IRLRU120N's pdf datasheet.

IRLRU120N Application circuits
IRLRU120N circuits
This is one application circuit of IRLRU120N,If you need more circuits,please download IRLRU120N's pdf datasheet.

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