2M X 8 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

The ISSI IS41C8200 and IS41LV8200 are 2,097,152 x 8-bit high- performance CMOS Dynamic Random Access Memory. These devices offer an accelarated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random accesses within a single row with access cycle time as short as 20 ns per 4-bit word. These features make the IS41C8200 and IS41LV8200 ideally suited for high-bandwidth graphics, digital signal processing, high-performance computing systems, and peripheral applications. The IS41C8200 and IS41LV8200 are packaged in 28-pin 300-mil SOJ with JEDEC standard pinouts. By Integrated Silicon Solution, Inc.
IS41C8200 's PackagesIS41C8200 's pdf datasheet
IS41C8200-50J
IS41C8200-60J
IS41LV8200-50J
IS41LV8200-60J
IS41C8200-50JI
IS41C8200-60JI
IS41LV8200-50JI
IS41LV8200-60JI




IS41C8200 Pinout, Pinouts
IS41C8200 pinout,Pin out
This is one package pinout of IS41C8200,If you need more pinouts please download IS41C8200's pdf datasheet.

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IS41C8200 Pb-Free IS41C8200 Cross Reference IS41C8200 Schematic IS41C8200 Distributor
IS41C8200 Application Notes IS41C8200 RoHS IS41C8200 Circuits IS41C8200 footprint
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