1M X 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODEThe ISSI IS41LV16100B is 1,048,576 x 16-bit high-perfor-
mance CMOS Dynamic Random Access Memories These
devices offer an accelerated cycle access called EDO
Page Mode. EDO Page Mode allows 1,024 random ac-
cesses within a single row with access cycle time as short
as 20 ns per 16-bit word. By Integrated Silicon Solution, Inc.
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| IS41LV16100B Pb-Free | IS41LV16100B Cross Reference | IS41LV16100B Schematic | IS41LV16100B Distributor |
| IS41LV16100B Application Notes | IS41LV16100B RoHS | IS41LV16100B Circuits | IS41LV16100B footprint |
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