256K X 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

The ISSI IS41LV16256B is 262,144 x 16-bit high-perfor- mance CMOS Dynamic Random Access Memory. Both prod- ucts offer accelerated cycle access EDO Page Mode. EDO Page Mode allows 512 random accesses within a single row with access cycle time as short as 10ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV16256B ideal for use in 16 and 32-bit wide data bus systems. By Integrated Silicon Solution, Inc.
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