4M X 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

The ISSI IS41LV44002B is 4,194,304 x 4-bit high-perfor- mance CMOS Dynamic Random Access Memory. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 2,048 random ac- cesses within a single row with access cycle time as short as 20 ns per 4-bit word. By Integrated Silicon Solution, Inc.
IS41LV44002B 's PackagesIS41LV44002B 's pdf datasheet
IS41LV44002B-50J
IS41LV44002B-50JL
IS41LV44002B-50T
IS41LV44002B-50TL
IS41LV44002B-50JI
IS41LV44002B-50JLI
IS41LV44002B-50TI
IS41LV44002B-50TLI




IS41LV44002B Pinout, Pinouts
IS41LV44002B pinout,Pin out
This is one package pinout of IS41LV44002B,If you need more pinouts please download IS41LV44002B's pdf datasheet.

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IS41LV44002B Application Notes IS41LV44002B RoHS IS41LV44002B Circuits IS41LV44002B footprint
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