512K Words X 16 Bits X 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

ISSIs 16Mb Synchronous DRAM IS42S16100C1 i organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the Clock input. Note: This is a summary datasheet specific to the die format. Please refer to the IS42S16100C1 for complete device specification. By Integrated Silicon Solution, Inc.
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IS42S16100C1-DIE 's PackagesIS42S16100C1-DIE 's pdf datasheet



IS42S16100C1-DIE Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
IS42S16100C1-DIE circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

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