512K Words X 16 Bits X 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

ISSIs 16Mb Synchronous DRAM IS42S16100C1 i organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the Clock input. Note: This is a summary datasheet specific to the die format. Please refer to the IS42S16100C1 for complete device specification. By Integrated Silicon Solution, Inc.
Part Manufacturer Description Datasheet Samples
TLC555TDF2 Texas Instruments DIE LinCMOS Timer 0-
TLC555TDF1 Texas Instruments DIE LinCMOS Timer 0-
NE555Y Texas Instruments PULSE; RECTANGULAR, TIMER, UUC, DIE
MSP430F5172CYS Texas Instruments 16-BIT, FLASH, 25MHz, RISC MICROCONTROLLER, UUC, DIE
MSP430F6736CY Texas Instruments 16-BIT, FLASH, 25MHz, RISC MICROCONTROLLER, UUC, DIE
TLC555Y Texas Instruments PULSE; RECTANGULAR, 2.1MHz, TIMER, UUC, DIE
UA78L05Y Texas Instruments 5V FIXED POSITIVE REGULATOR, UUC3, DIE
TLC339Y Texas Instruments QUAD COMPARATOR, 2500ns RESPONSE TIME, UUC, DIE
LM393Y Texas Instruments DUAL COMPARATOR, 5000uV OFFSET-MAX, 1300ns RESPONSE TIME, UUC, DIE
TL1431VTDB2 Texas Instruments Rad-Tolerant Space Grade Die, Precision (Programmable) Shunt Reference 0-
IS42S16100C1-DIE 's PackagesIS42S16100C1-DIE 's pdf datasheet



IS42S16100C1-DIE Pinout will be updated soon..., now you can download the pdf datasheet to check the pinouts !
IS42S16100C1-DIE circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

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