256K X 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM

The ISSI IS62WV25616ALL IS62WV25616BLL are high- speed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1 is HIGH (deselected) or when CS1 is LOW and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation CAN be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS62WV25616ALL IS62WV25616BLL are packaged in the JEDEC standard 44-Pin TSOP (TYPE II) and 48-pin mini BGA (6mmx8mm). By Integrated Silicon Solution, Inc.
IS62WV25616ALL 's PackagesIS62WV25616ALL 's pdf datasheet
IS62WV25616ALL-70T
IS62WV25616ALL-70TI
IS62WV25616ALL-70BI
IS62WV25616BLL-55T
IS62WV25616BLL-70T
IS62WV25616BLL-55TI
IS62WV25616BLL-55TLI
IS62WV25616BLL-55BI
IS62WV25616BLL-55BLI
IS62WV25616BLL




IS62WV25616ALL Pinout, Pinouts
IS62WV25616ALL pinout,Pin out
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IS62WV25616ALL Application Notes IS62WV25616ALL RoHS IS62WV25616ALL Circuits IS62WV25616ALL footprint