Isc Silicon NPN Darlington Power Transistor

Isc Silicon NPN Darlington Power Transistor MJ1000 DESCRIPTION Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) High DC Current Gain- : hFE= 1000(Min.)@IC= 3A Low Collector Saturation Voltage- : VCE (sat)= 2.0V(Max.)@ IC= 3A By Inchange Semiconductor Company
MJ1000 's PackagesMJ1000 's pdf datasheet



MJ1000 Pinout, Pinouts
MJ1000 pinout,Pin out
This is one package pinout of MJ1000,If you need more pinouts please download MJ1000's pdf datasheet.

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