Isc Silicon NPN Darlington Power Transistor

Isc Silicon NPN Darlington Power Transistor MJ1001 DESCRIPTION Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min.) High DC Current Gain- : hFE= 1000(Min.)@IC= 3A Low Collector Saturation Voltage- : VCE (sat)= 2.0V(Max.)@ IC= 3A By Inchange Semiconductor Company
MJ1001 's PackagesMJ1001 's pdf datasheet



MJ1001 Pinout, Pinouts
MJ1001 pinout,Pin out
This is one package pinout of MJ1001,If you need more pinouts please download MJ1001's pdf datasheet.

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