Isc Silicon NPN Darlington Power Transistor

Isc Silicon NPN Darlington Power Transistor MJ11012 DESCRIPTION Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) High DC Current Gain- : hFE= 1000(Min.)@IC= 20A Low Collector Saturation Voltage- : VCE (sat)= 3.0V(Max.)@ IC= 20A Complement to Type MJ11011 By Inchange Semiconductor Company
MJ11012 's PackagesMJ11012 's pdf datasheet



MJ11012 Pinout, Pinouts
MJ11012 pinout,Pin out
This is one package pinout of MJ11012,If you need more pinouts please download MJ11012's pdf datasheet.

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