Isc Silicon PNP Darlington Power TransistorIsc Silicon PNP Darlington Power Transistor DESCRIPTION
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -90V(Min.)
High DC Current Gain-
: hFE= 1000(Min.)@IC= -20A
Low Collector Saturation Voltage-
: VCE (sat)= -3.0V(Max.)@ IC= -20A
Complement to Type MJ11014 By Inchange Semiconductor Company
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