Isc Silicon NPN Darlington Power Transistor

Isc Silicon NPN Darlington Power Transistor MJ11014 DESCRIPTION Collector-Emitter Breakdown Voltage- : V(BR)CEO= 90V(Min.) High DC Current Gain- : hFE= 1000(Min.)@IC= 20A Low Collector Saturation Voltage- : VCE (sat)= 3.0V(Max.)@ IC= 20A Complement to Type MJ11013 By Inchange Semiconductor Company
MJ11014 's PackagesMJ11014 's pdf datasheet



MJ11014 Pinout, Pinouts
MJ11014 pinout,Pin out
This is one package pinout of MJ11014,If you need more pinouts please download MJ11014's pdf datasheet.

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