Isc Silicon PNP Darlingtion Power Transistor

Isc Silicon PNP Darlingtion Power Transistor MJ2501 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- hFE = 1000 (Min) @ IC = -5A Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min) Complement to type MJ3001 By Inchange Semiconductor Company
MJ2501 's PackagesMJ2501 's pdf datasheet

MJ2501 Pinout, Pinouts
MJ2501 pinout,Pin out
This is one package pinout of MJ2501,If you need more pinouts please download MJ2501's pdf datasheet.

MJ2501 circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

Related Electronics Part Number

Related Keywords:

MJ2501 Pb-Free MJ2501 Cross Reference MJ2501 Schematic MJ2501 Distributor
MJ2501 Application Notes MJ2501 RoHS MJ2501 Circuits MJ2501 footprint