Isc Silicon PNP Darlingtion Power Transistor

Isc Silicon PNP Darlingtion Power Transistor MJ2501 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- hFE = 1000 (Min) @ IC = -5A Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min) Complement to type MJ3001 By Inchange Semiconductor Company
MJ2501 's PackagesMJ2501 's pdf datasheet



MJ2501 Pinout, Pinouts
MJ2501 pinout,Pin out
This is one package pinout of MJ2501,If you need more pinouts please download MJ2501's pdf datasheet.

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