PolarHV™ HiPerFETs ( 500V To 1200V) With Reduced Rds(on) PolarHV HiPerFETs ( 500V to 1200V) with reduced Rds(on) IXFN30N120P Power MOSFETs with Fast Intrinsic Diode By IXYS Corporation

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• IXFN32N120P, PolarHV™ HiPerFETs ( 500V To 1200V) With Reduced Rds(on)
• IXTN30N100L, Linear Power MOSFETs (High Voltage SOA)
• IXTB30N100L, Linear Power MOSFETs (High Voltage SOA)
• IXTN17N120L, Linear Power MOSFETs (High Voltage SOA)
• IXUN350N10, 1st Generation Trench Gate Power MOSFETs
• APM4053PU, P-Channel Enhancement Mode MOSFET
• STP15N05L, N - Channel Enhancement Mode Power Mos Transistor
• SSF25N40A, Advanced Power MOSFET
• FS1KM-16A, High-speed Switching Use Electric Semiconductor
• IRF234, 8.1a And 6.5a, 275v And 250v, 0.45 And 0.68 Ohm, N-channel Power Mosfets
• FQB6N15, 150V N-Channel MOSFET
• NTMD4884NF, Power MOSFET And Schottky Diode
• FQPF6N45, 450V N-Channel MOSFET

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