• Product pinout
  • Description
  • NGB15N41CLT4,Ignition IGBT DPAK 15 Amps, 410 Volts, 2.1 V(max)
  • This Logic Level Insulated Gate Bipolar Transistor (IGBT) NGB15N41CLT4 features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or ...
  • FGL40N120AN,1200V NPT IGBT
  • Employing NPT technology, Fairchild\'s AN series of IGBTs FGL40N120AN provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible ...
  • FGH40N120AN,1200V NPT IGBT
  • Employing NPT technology, Fairchilds AN series of IGBTs FGH40N120AN provides low conduction and switching losses. The AN series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and uninterruptible ...
  • FGPF30N30T,300V, 30A PDP Trench IGBT
  • Using Novel Trench IGBT FGPF30N30T Technology, Fairchilds new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
    ...
  • FGPF30N30TD,300V, 30A PDP Trench IGBT
  • Using Novel Trench IGBT FGPF30N30TD Technology, Fairchilds new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
    ...
  • FGH30N60LSD,PDD IGBT
  • The FGH30N60LSD is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
    ...
  • FGPF70N30T,300V, 70A PDP IGBT
  • Using Novel Trench IGBT FGPF70N30T Technology, Fairchild\'s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
    ...
  • FGPF70N30TD,300V, 70A PDP IGBT
  • Using Novel Trench IGBT FGPF70N30TD Technology, Fairchild\'s new sesries of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
    ...
  • FGA25N120ANTD,1200V NPT-Trench IGBT
  • Using Fairchild\'s proprietary trench design and advanced NPT technology, the 1200V NPT IGBT FGA25N120ANTD offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.
    This device is well suited for the ...
  • FGD3N60LSD,600V IGBT For HID Application
  • Fairchild\'s Insulated Gate Bipolar Transistors (IGBTs) FGD3N60LSD provide very low conduction losses. The device is designed for applications where very low On-Voltage Drop is a required feature.
    ...
  • FGA15N120AND,Discrete, NPT IGBT With Diode
  • Employing NPT technology, Fairchilds AND series of IGBTs FGA15N120AND provides low conduction and switching losses. The AND series offers solutions for applications such as induction heating (IH), motor control, general purpose inverters and ...
  • SGH80N60UFD,Discrete, High Performance IGBT With Diode
  • Fairchild\'s UFD series of Insulated Gate Bipolar Transistors (IGBTs) SGH80N60UFD provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a ...
  • SGH15N60RUFD,Discrete, Short Circuit Rated IGBT With Diode
  • Fairchild\'s RUFD series of Insulated Gate Bipolar Transistors (IGBTs) SGH15N60RUFD provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power ...
  • SGF23N60UF,Discrete, High Performance IGBT
  • Fairchild\'s Insulated Gate Bipolar Transistor(IGBT) SGF23N60UF UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching is required.
    ...
  • SGR6N60UF,Discrete, High Performance IGBT
  • Fairchild\'s UF series of Insulated Gate Bipolar Transistors (IGBTs) SGR6N60UF provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required ...
  • SGP13N60UFD,Discrete, High Performance IGBT With Diode
  • Fairchild\'s UFD series of Insulated Gate Bipolar Transistors (IGBTs) SGP13N60UFD provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a ...
  • FGL60N100BNTD,1000V, 60A NPT-Trench IGBT
  • Trench insulated gate bipolar transistors (IGBTs) FGL60N100BNTD with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for Induction Heating ( ...
  • SGP10N60RUFD,Discrete, Short Circuit Rated IGBT With Diode
  • Fairchild\'s RUFD series of Insulated Gate Bipolar Transistors (IGBTs) SGP10N60RUFD provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power ...
  • SGH10N60RUFD,Discrete, Short Circuit Rated IGBT With Diode
  • Fairchild\'s RUFD series of Insulated Gate Bipolar Transistors (IGBTs) SGH10N60RUFD provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power ...
  • HGTG30N60A4,600V, SMPS Series N-Channel IGBT
  • The HGTG30N60A4 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower ...
  • SGP6N60UFD,Discrete, High Performance IGBT With Diode
  • Fairchild\'s UFD series of Insulated Gate Bipolar Transistors (IGBTs) SGP6N60UFD provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required ...
  • SGS13N60UFD,Discrete, High Performance IGBT With Diode
  • Fairchild\'s UFD series of Insulated Gate Bipolar Transistors (IGBTs) SGS13N60UFD provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a ...
  • SGH40N60UFD,Discrete, High Performance IGBT With Diode
  • Fairchild\'s UFD series of Insulated Gate Bipolar Transistors (IGBTs) SGH40N60UFD provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a ...
  • SGH20N60RUFD,Discrete, Short Circuit Rated IGBT With Diode
  • Fairchild\'s RUFD series of Insulated Gate Bipolar Transistors (IGBTs) SGH20N60RUFD provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power ...
  • HGTD7N60C3S,14A,600V, UFS Series N-Channel IGBTs
  • 14A, 600V, UFS Series N-Channel IGBTs The HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low ...
  • FGL40N120AND,1200V NPT IGBT
  • Employing NPT technology, Fairchilds AND series of IGBTs FGL40N120AND provides low conduction and switching losses. The AND series offers an solution for application such as induction heating (IH), motor control, general purpose inverters and ...
  • SGP23N60UFD,Discrete, High Performance IGBT With Diode
  • Fairchild\'s UFD series of Insulated Gate Bipolar Transistors (IGBTs) SGP23N60UFD provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a ...
  • HGTG40N60B3,600V, UFS Series N-Channel IGBT
  • The HGTG40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower ...
  • HGTG20N60A4,600V, SMPS Series N-Channel IGBTs
  • 600V, SMPS Series N-Channel IGBTs The HGTG20N60A4 and HGTP20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have th high input impedance of a MOSFET and the low on-state ...
  • HGTD1N120BNS,5.3A, 1200v, NPT Series N-Channel IGBT
  • 5.3A, 1200V, NPT Series N-Channel IGBT The HGTD1N120BNS and HGTP1N120BN are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar ...
  • HGTP3N60A4,600V, NPT Series N-Channel IGBT
  • The HGTD3N60A4S and the HGTP3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar ...
  • SGP23N60UF,Discrete, High Performance IGBT
  • Fairchild\'s UF series of Insulated Gate Bipolar Transistors (IGBTs) SGP23N60UF provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required ...
  • HGTG30N60B3,600V, UFS Series N-Channel IGBT
  • The HGTG30N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower ...
  • SGH80N60UF,Discrete, High Performance IGBT
  • Fairchild\'s UF series of Insulated Gate Bipolar Transistors (IGBTs) SGH80N60UF provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required ...
  • HGTG12N60A4,600V SMPS Series N-Channel IGBT
  • The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S9A are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a ...
  • FGAF40N60UF,Ultrafast IGBT
  • Fairchild\'s UF series of Insulated Gate Bipolar Transistors (IGBTs) FGAF40N60UF provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required ...
  • HGT1S10N120BNS,1200V, NPT Series N-Channel IGBT
  • The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the ...
  • SGL160N60UFD,Discrete, High Performance IGBT With Diode
  • Fairchild\'s UFD series of Insulated Gate Bipolar Transistors (IGBTs) SGL160N60UFD provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a ...
  • SGP40N60UF,Discrete, High Performance IGBT
  • Fairchild\'s UF series of Insulated Gate Bipolar Transistors (IGBTs) SGP40N60UF provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required ...
  • SGL50N60RUFD,Discrete, Short Circuit Rated IGBT With Diode
  • Fairchild\'s RUFD series of Insulated Gate Bipolar Transistors (IGBTs) SGL50N60RUFD provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power ...
  • SGH40N60UF,Discrete, High Performance IGBT
  • Fairchild\'s UF series of Insulated Gate Bipolar Transistors (IGBTs) SGH40N60UF provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required ...
  • HGTP12N60C3,24A,600V, UFS Series N-Channel IGBTs
  • 24A,600V, UFS Series N-Channel IGBTs HGTP12N60C3 The HGTP12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and ...
  • SGF80N60UF,Discrete, High Performance IGBT
  • Fairchild\'s Insulated Gate Bipolar Transistor(IGBT) SGF80N60UF UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching is required.
    ...
  • SGP13N60UF,Discrete, High Performance IGBT
  • Fairchild\'s UF series of Insulated Gate Bipolar Transistors (IGBTs) SGP13N60UF provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required ...
  • HGTP7N60A4,600V SMPS Series N-Channel IGBT
  • The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a ...
  • HGTP20N60A4,600V, SMPS Series N-Channel IGBTs
  • 600V, SMPS Series N-Channel IGBTs HGTP20N60A4 The HGTG20N60A4 and HGTP20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low ...
  • HGTG40N60A4,600V, SMPS Series N-Channel IGBT
  • The HGTG40N60A4 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower ...
  • HGTG27N120BN,72A, 1200V, NPT Series N-Channel IGBT
  • The HGTG27N120BN and HGT5A27N120BN are Non- Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input ...
  • HGT1S20N60C3S,45A, 600V, UFS Series N-Channel IGBT
  • 45A, 600V, UFS Series N-Channel IGBT HGT1S20N60C3S This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state ...
  • SGH30N60RUFD,Discrete, Short Circuit Rated IGBT With Diode
  • Fairchild\'s RUFD series of Insulated Gate Bipolar Transistors (IGBTs) SGH30N60RUFD provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power ...
  • ISL9V5036P3,EcoSPARK 500mJ, 360V, N-Channel Ignition IGBT
  • The ISL9V5036S3S, ISL9V5036P3, and ISL9V5036S3 are the next generation IGBTs that offer outstanding SCIS capability in the D - Pak (TO-263) and TO-220 plastic package. These devices are intended for use in automotive ignition circuits, specifically as ...
  • FGA40N60UFD,Ultrafast IGBT
  • Fairchild\'s UFD series of Insulated Gate Bipolar Transistors (IGBTs) FGA40N60UFD provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a ...
  • FGH50N3,300V, PT N-Channel IGBT, TO-247 Package
  • The FGH50N3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower ...
  • SGH23N60UFD,Discrete, High Performance IGBT With Diode
  • Fairchild\'s Insulated Gate Bipolar Transistor(IGBT) SGH23N60UFD UFD series provides low conduction and switching losses. UFD series is designed for the applications such as motor control and general inverters where High Speed Switching is required.
    ...
  • SGR2N60UFD,Discrete, High Performance IGBT With Diode
  • Fairchild\'s UFD series of Insulated Gate Bipolar Transistors (IGBTs) SGR2N60UFD provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required ...
  • HGTG20N60B3,600V, UFS Series N-Channel IGBT
  • The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar ...
  • ISL9V5036S3ST,360V EcoSPARK 500mJ N-Channel Ignition IGBT
  • The ISL9V5036S3S, ISL9V5036P3, and ISL9V5036S3 are the next generation IGBTs that offer outstanding SCIS capability in the D2- Pak (TO-263) and TO-220 plastic package. These devices are intended for use in automotive ignition circuits, specifically as ...
  • SGL160N60UF,Discrete, High Performance IGBT
  • Fairchild\'s UF series of Insulated Gate Bipolar Transistors (IGBTs) SGL160N60UF provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required ...
  • HGTG11N120CN,43A, 1200V, NPT Series N-Channel IGBT
  • The HGTG11N120CN, HGTP11N120CN, and HGT1S11N120CNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the ...
  • HGT1S12N60A4S9A,600V SMPS Series N-Channel IGBT
  • The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S9A are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a ...
  • SGS10N60RUFD,Discrete, Short Circuit Rated IGBT With Diode
  • Fairchild\'s RUFD series of Insulated Gate Bipolar Transistors (IGBTs) SGS10N60RUFD provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, uninterrupted power ...
  • SGM2N60UF,Discrete, High Performance IGBT
  • Fairchild\'s UF series of Insulated Gate Bipolar Transistors (IGBTs) SGM2N60UF provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required ...
  • HGTP10N120BN,35A,1200V, NPT Series N-Channel IGBT
  • The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the ...
  • FGA50N100BNTD,1000V, 50A NPT-Trench IGBT CO-PAK
  • Trench insulated gate bipolar transistors (IGBTs) FGA50N100BNTD with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for Induction Heating ( ...
  • HGTP12N60A4,600V SMPS Series N-Channel IGBT
  • The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S9A are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a ...
  • HGTG18N120BN,54A, 1200V, NPT Series N-Channel IGBT
  • 54A, 1200V, NPT Series N-Channel IGBT The HGTG18N120BN is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device ...