4a, 250v, 0.700 Ohm, Rad Hard, N-channel Power Mosfet Corporation

4a, 250v, 0.700 Ohm, Rad Hard, N-channel Power MOSFET JANSR2N7278 Corporation,The Intersil Corporation has designed a series of SECOND GENERATION hardened Power MOSFETs of both N-Chan- nel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25m. Total dose hardness is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron hardness ranging from 1E13 for 500V product to 1E14 for 100V product. Dose rate hard- ness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting. This MOSFET is an enhancement-mode silicon-gate power eld effect Transistor of the vertical DMOS (VDMOS) struc- ture. It is specially designed and processed to exhibit mini- mal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance survival to dose rate (GAMMA DOT) exposure. By Intersil Corporation
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JANSR2N7278 Pinout, Pinouts
JANSR2N7278 pinout,Pin out
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