256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit (x8/x16, Uniform Block) 3 V Supply Flash Memory

The Numonyx™ Axcell™ M29EW Flash memory based on 65nm MLC technology is the world’s leading line of parallel NOR Flash for embedded applications. It CAN be read, erased and reprogrammed; and these operations CAN be performed using a single low voltage (2.7 to 3.6 V) supply. Upon power-up, the memory defaults to its array read mode. The main memory array is divided into 64-Kword/128-Kbyte uniform blocks that CAN be erased independently so that valid data CAN be preserved while old data is purged. Program and Erase commands are written to the command Interface of the memory. An on-chip Program/Erase controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation CAN be detected and any error condition CAN be identified. The command set required to control the memory is consistent with JEDEC standards. Chip Enable, Output Enable and Write Enable signals control the bus operation of the memory. They allow simple connection to most Microprocessors often without additional Logic By Numonyx
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JS28F256M29EWH Pinout, Pinouts
JS28F256M29EWH pinout,Pin out
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JS28F256M29EWH Application circuits
JS28F256M29EWH circuits
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