256Mb (16M X 16 Bit) UtRAMThe K1S5616BCM is fabricated by SAMSUNGs advanced CMOS technology using one Transistor memory cell. The device sup-
ports 4 page read operation and Industrial temperature range. The device supports dual chip selection for user Interface The
device also supports internal Temperature Compensated Self Refresh mode for the standby power saving at room temperature
range. By Samsung Semiconductor, Inc.
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| K1S5616BCM Pb-Free | K1S5616BCM Cross Reference | K1S5616BCM Schematic | K1S5616BCM Distributor |
| K1S5616BCM Application Notes | K1S5616BCM RoHS | K1S5616BCM Circuits | K1S5616BCM footprint |
