2Gb B-die DDR3 SDRAM Specification

The 2Gb DDR3 SDRAM B-die is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This syn- chronous device achieves high speed double-data-rate transfer rates of up to 1600Mb/sec/pin (DDR3-1600) for general applications. The chip is designed to comply with the following key DDR3 SDRAM fea- tures such as posted CAS, Programmable CWL, Internal (Self) Calibra- tion, On Die Termination using ODT pin and Asynchronous Reset . By Samsung Semiconductor, Inc.
K4B2G0846B 's PackagesK4B2G0846B 's pdf datasheet
K4B2G0446B-HCF7
K4B2G0446B-HCF8
K4B2G0446B-HCH9
K4B2G0846B-HCF7
K4B2G0846B-HCF8
K4B2G0846B-HCH9
K4B2G1646B-HCF7
K4B2G1646B-HCF8
K4B2G1646B-HCH9

K4B2G0846B pdf datasheet download


K4B2G0846B Pinout, Pinouts
K4B2G0846B pinout,Pin out
This is one package pinout of K4B2G0846B,If you need more pinouts please download K4B2G0846B's pdf datasheet.

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