DDP 4Gb B-die DDR3 SDRAM SpecificationThe DDP 4Gb DDR3 SDRAM B-die is organized as a 128Mbit x 4 I/Os x
8banks, 64Mbit x 8 I/Os x 8banks. This synchronous device achieves high
speed double-data-rate transfer rates of up to 1333Mb/sec/pin (DDR3-
1333) for general applications.
The chip is designed to comply with the following key DDR3 SDRAM fea-
tures such as posted CAS, Programmable CWL, Internal (Self) Calibra-
tion, On Die Termination using ODT pin and Asynchronous Reset . By Samsung Semiconductor, Inc.
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| K4B4G0446B Application Notes | K4B4G0446B RoHS | K4B4G0446B Circuits | K4B4G0446B footprint |
