128mbit Gddr Sdram Semiconductor

The K4D261638F is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 1.6GB/s/chip. I/O transactions are possible on both edges of the Clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications. By Samsung Semiconductor, Inc.
K4D261638F 's PackagesK4D261638F 's pdf datasheet

K4D261638F Pinout, Pinouts
K4D261638F pinout,Pin out
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