1m X 32bit X 4 Banks Graphic Double Data Rate Synchronous Dram With Bi-directional Data Strobe And Dll Semiconductor

The K4D263238E is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 3.2GB/s/chip. I/O transactions are possible on both edges of the Clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications. By Samsung Semiconductor, Inc.
K4D263238E-GC 's PackagesK4D263238E-GC 's pdf datasheet
K4D263238E-GC25 FBGA
K4D263238E-GC2A FBGA
K4D263238E-GC33 FBGA
K4D263238E-GC36 FBGA
K4D263238E-GC40 FBGA
K4D263238E-GC45 FBGA




K4D263238E-GC Pinout, Pinouts
K4D263238E-GC pinout,Pin out
This is one package pinout of K4D263238E-GC,If you need more pinouts please download K4D263238E-GC's pdf datasheet.

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K4D263238E-GC Application Notes K4D263238E-GC RoHS K4D263238E-GC Circuits K4D263238E-GC footprint
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