128mbit Gddr Sdram Semiconductor

The K4D263238G is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 2.8GB/s/chip. I/O transactions are possible on both edges of the Clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications. By Samsung Semiconductor, Inc.
K4D263238G-GC 's PackagesK4D263238G-GC 's pdf datasheet
K4D263238G-GC2A
K4D263238G-GC33
K4D263238G-GC36




K4D263238G-GC Pinout, Pinouts
K4D263238G-GC pinout,Pin out
This is one package pinout of K4D263238G-GC,If you need more pinouts please download K4D263238G-GC's pdf datasheet.

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K4D263238G-GC Application Notes K4D263238G-GC RoHS K4D263238G-GC Circuits K4D263238G-GC footprint
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