1m X 32bit X 4 Banks Double Data Rate Synchronous Ram With Bi-directional Data Strobe And Dll Semiconductor

The K4D26323RA is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 2.8GB/s/chip. I/O transactions are possible on both edges of the Clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications. By Samsung Semiconductor, Inc.
K4D26323RA-GC 's PackagesK4D26323RA-GC 's pdf datasheet
K4D26323RA-GC33 FBGA
K4D26323RA-GC36 FBGA

K4D26323RA-GC Pinout, Pinouts
K4D26323RA-GC pinout,Pin out
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