256mbit Gddr Sdram Semiconductor

The K4D553238F is 268,435,456 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 2.8GB/s/chip. I/O transactions are possible on both edges of the Clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications. By Samsung Semiconductor, Inc.
K4D553238F-GC 's PackagesK4D553238F-GC 's pdf datasheet
K4D553238F-GC2A FBGA
K4D553238F-GC33 FBGA
K4D553238F-GC36 FBGA

K4D553238F-GC Pinout, Pinouts
K4D553238F-GC pinout,Pin out
This is one package pinout of K4D553238F-GC,If you need more pinouts please download K4D553238F-GC's pdf datasheet.

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K4D553238F-GC Application Notes K4D553238F-GC RoHS K4D553238F-GC Circuits K4D553238F-GC footprint