1m X 16bit Cmos Dynamic Ram With Extended Data Out Semiconductor

This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs K4E171611D K4E151611D K4E171612D K4E151612D . Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self- refresh operation is available in L-version. This 1Mx16 EDO Mode DRAM family is fabricated using Samsung s advanced CMOS pro- cess to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines By Samsung Semiconductor, Inc.
K4E151611D 's PackagesK4E151611D 's pdf datasheet

K4E151611D Pinout, Pinouts
K4E151611D pinout,Pin out
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