4m X 4bit Cmos Dynamic Ram With Extended Data Out Semiconductor

This is a family of 4.194,304 x 4 bit Extended Data Out CMOS DRAMs K4E170411D K4E160411D K4E170412D K4E160412D . Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx4 EDO DRAM family is fabricated using Samsungs advanced CMOS process to realize high band-width, low power consumption and high reliability. It may be used as main memory unit for high level computer, microcomputer and personal computer. By Samsung Semiconductor, Inc.
K4E170411D 's PackagesK4E170411D 's pdf datasheet

K4E170411D Pinout, Pinouts
K4E170411D pinout,Pin out
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