16m X 4bit Cmos Dynamic Ram With Extended Data Out Semiconductor

This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs K4E660412E K4E640412E . Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor- mal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 16Mx4 EDO Mode DRAM family is fabricat ed using Samsungs advanced CMOS process to realize high band-width, low power consumption and high reliability. By Samsung Semiconductor, Inc.
K4E640412E 's PackagesK4E640412E 's pdf datasheet

K4E640412E Pinout, Pinouts
K4E640412E pinout,Pin out
This is one package pinout of K4E640412E,If you need more pinouts please download K4E640412E's pdf datasheet.

K4E640412E circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

Related Electronics Part Number

Related Keywords:

K4E640412E Pb-Free K4E640412E Cross Reference K4E640412E Schematic K4E640412E Distributor
K4E640412E Application Notes K4E640412E RoHS K4E640412E Circuits K4E640412E footprint