4m X 16bit Cmos Dynamic Ram With Extended Data Out Semiconductor

This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs K4E661611D K4E641611D . Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-50 or -60) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx16 EDO Mode DRAM family is fabricated using Samsungs advanced CMOS process to realize high band-width, low power consumption and high reliability. By Samsung Semiconductor, Inc.
K4E641611D 's PackagesK4E641611D 's pdf datasheet
K4E661611D-T
K4E641611D-T
K4E661611D




K4E641611D Pinout, Pinouts
K4E641611D pinout,Pin out
This is one package pinout of K4E641611D,If you need more pinouts please download K4E641611D's pdf datasheet.

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