4m X 16bit Cmos Dynamic Ram With Extended Data Out Semiconductor

This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs K4E661612B K4E641612B . Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Nor- mal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 EDO Mode DRAM family is fabricated using Samsungs advanced CMOS process to realize high band-width, low power consumption and high reliability. By Samsung Semiconductor, Inc.
K4E641612B 's PackagesK4E641612B 's pdf datasheet
K4E661612B-T
K4E641612B-T
K4E661612B




K4E641612B Pinout, Pinouts
K4E641612B pinout,Pin out
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