4m X 16bit Cmos Dynamic Ram With Fast Page Mode Semiconductor

This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs K4F661612E K4F641612E . Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 Fast Page Mode DRAM family is fabricated using Samsungs advanced CMOS process to realize high band-width, low power consumption and high reliability. By Samsung Semiconductor, Inc.
K4F641612E 's PackagesK4F641612E 's pdf datasheet
K4F661612E
K4F661612E-T
K4F641612E-T




K4F641612E Pinout, Pinouts
K4F641612E pinout,Pin out
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