512mb C-die Ddr Sdram Specification Semiconductor

The K4H510438C / K4H510838C / K4H511638C is 536,870,912 bits of double data rate synchronous DRAM organized as 4x 33,554,432 / 4x 16,777,216 / 4x 8,388,608 words by 4/8/16bits, fabricated with SAMSUNGs high performance CMOS technology. Syn- chronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications. By Samsung Semiconductor, Inc.
K4H510438C-UC 's PackagesK4H510438C-UC 's pdf datasheet

K4H510438C-UC Pinout, Pinouts
K4H510438C-UC pinout,Pin out
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