Ddr Sdram 256mb E-die (x4, X8) Semiconductor

The K4H560438E / K4H560838E is 268,435,456 bits of double data rate synchronous DRAM organized as 4x 16,777,216 / 4x 8,388,608 words by 4/ 8/ bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 333Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating fre- quencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance mem- ory system applications. By Samsung Semiconductor, Inc.
K4H560438E-TC 's PackagesK4H560438E-TC 's pdf datasheet



K4H560438E-TC Pinout, Pinouts
K4H560438E-TC pinout,Pin out
This is one package pinout of K4H560438E-TC,If you need more pinouts please download K4H560438E-TC's pdf datasheet.

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