256mb F-die Ddr Sdram Specification Semiconductor

The K4H560838F / K4H561638F is 268,435,456 bits of double data rate synchronous DRAM organized as 4x 8,388,608 / 4x 4,194,304 words by 4/16bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 333Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequen- cies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications. General Description By Samsung Semiconductor, Inc.
K4H560838F 's PackagesK4H560838F 's pdf datasheet

K4H560838F Pinout, Pinouts
K4H560838F pinout,Pin out
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