The K4J10324QD is 1G bits of hyper synchronous data rate Dynamic RAM organized as 16 x 2,097,152 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 8.0GB/s/chip. I/O transactions are possible on both edges of the Clock cycle. Range of operating frequencies, and programmable laten- cies allow the device to be useful for a variety of high performance memory system applications. By Samsung Semiconductor, Inc.
K4J10324QD 's PackagesK4J10324QD 's pdf datasheet

K4J10324QD Pinout, Pinouts
K4J10324QD pinout,Pin out
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