256Mbit GDDR3 SDRAM

The K4J55323QI is 268,435,456 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fab- ricated with SAMSUNG high performance CMOS technology. Synchronous features with Data Strobe allow extremely high perfor- mance up to 8.0GB/s/chip. I/O transactions are possible on both edges of the Clock cycle. Range of operating frequencies, and programmable latencies allow the device to be useful for a variety of high performance memory system applications. By Samsung Semiconductor, Inc.
K4J55323QI 's PackagesK4J55323QI 's pdf datasheet
K4J55323QI-AC140 FBGA
K4J55323QI-BC120 FBGA
K4J55323QI-BC140 FBGA
K4J55323QI-BJ110 FBGA
K4J55323QI-BJ1A0 FBGA
K4J55323QI-BJ1A
K4J55323QI-BJ11
K4J55323QI-BC12
K4J55323QI-BC14




K4J55323QI Pinout, Pinouts
K4J55323QI pinout,Pin out
This is one package pinout of K4J55323QI,If you need more pinouts please download K4J55323QI's pdf datasheet.

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K4J55323QI Application Notes K4J55323QI RoHS K4J55323QI Circuits K4J55323QI footprint
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