2M X 16Bit X 4 Banks Mobile SDRAM In 54FBGA

The K4M281633H is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,098,152 words by 16 bits, fabricated with SAMSUNGs highperformance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system Clock and I/O transactions are possible on every Clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high per- formance memory system applications. By Samsung Semiconductor, Inc.
K4M281633H 's PackagesK4M281633H 's pdf datasheet
K4M281633H-BG750 FBGA
K4M281633H-BG75T FBGA
K4M281633H-BN750 FBGA
K4M281633H-BN75T FBGA
K4M281633H-RN750 FBGA
K4M281633H-RN75T FBGA




K4M281633H Pinout, Pinouts
K4M281633H pinout,Pin out
This is one package pinout of K4M281633H,If you need more pinouts please download K4M281633H's pdf datasheet.

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K4M281633H Application Notes K4M281633H RoHS K4M281633H Circuits K4M281633H footprint
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