2m X 32bit X 4 Banks Mobile Sdram In 90fbga SemiconductorThe K4M56323LE is 268,435,456 bits synchronous high data
rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits,
fabricated with SAMSUNGs high performance CMOS technol-
ogy. Synchronous design allows precise cycle control with the
use of system Clock and I/O transactions are possible on every
Clock cycle. Range of operating frequencies, programmable
burst lengths and programmable latencies allow the same
device to be useful for a variety of high bandwidth and high per-
formance memory system applications. By Samsung Semiconductor, Inc.
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K4M56323LE Pb-Free | K4M56323LE Cross Reference | K4M56323LE Schematic | K4M56323LE Distributor |
K4M56323LE Application Notes | K4M56323LE RoHS | K4M56323LE Circuits | K4M56323LE footprint |