2M X 32Bit X 4 Banks Mobile SDRAM In 90FBGA

The K4M56323LG is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technol ogy. Synchronous design allows precise cycle control with the use of system Clock and I/O transactions are possible on every Clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high per- formance memory system applications. By Samsung Semiconductor, Inc.
K4M56323LG 's PackagesK4M56323LG 's pdf datasheet
K4M56323LG-HN600
K4M56323LG-HN750
K4M56323LG-HN75T




K4M56323LG Pinout, Pinouts
K4M56323LG pinout,Pin out
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