256Mbit GDDR2 SDRAM

FOR 4M x 16Bit x 4 Bank gDDR2 SDRAM The 256Mb gDDR2 SDRAM chip is organized as 4Mbit x 16 I/O x 4banks banks device. This synchronous device achieve high speed graphic double-data-rate transfer rates of up to 1000Mb/sec/pin for general applications. The chip is designed to comply with the follow- ing key gDDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination. By Samsung Semiconductor, Inc.
K4N56163QG 's PackagesK4N56163QG 's pdf datasheet
K4N56163QG-ZC250 FBGA
K4N56163QG-ZC25T FBGA
K4N56163QG-ZC2A0 FBGA
K4N56163QG-ZC20
K4N56163QG-ZC22
K4N56163QG-ZC25
K4N56163QG-ZC2A




K4N56163QG Pinout, Pinouts
K4N56163QG pinout,Pin out
This is one package pinout of K4N56163QG,If you need more pinouts please download K4N56163QG's pdf datasheet.

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