128Mbit RDRAM 256K X 16 Bit X 32s Banks

K4R271669H The 128Mbit RDRAM devices are extremely high-speed CMOS DRAMs organized as 8M words by 16. The use of Rambus Signaling Level (RSL) technology permits 800MHz transfer rates while using conventional system and board design technologies. RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10ns per sixteen bytes). The architecture of RDRAM devices allows the highest sustained bandwidth for multiple, simultaneous randomly addressed memory transactions. The separate control and data buses with independent row and column control yield over 95% bus efficiency. The RDRAM device's 32 banks support up to four simultaneous transactions. By Samsung Semiconductor, Inc.
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K4R271669H-DCS8




K4R271669H Pinout, Pinouts
K4R271669H pinout,Pin out
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