128Mbit RDRAM 256K X 16 Bit X 32s Banks

K4R271669H The 128Mbit RDRAM devices are extremely high-speed CMOS DRAMs organized as 8M words by 16. The use of Rambus Signaling Level (RSL) technology permits 800MHz transfer rates while using conventional system and board design technologies. RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10ns per sixteen bytes). The architecture of RDRAM devices allows the highest sustained bandwidth for multiple, simultaneous randomly addressed memory transactions. The separate control and data buses with independent row and column control yield over 95% bus efficiency. The RDRAM device's 32 banks support up to four simultaneous transactions. By Samsung Semiconductor, Inc.
K4R271669H 's PackagesK4R271669H 's pdf datasheet

K4R271669H Pinout, Pinouts
K4R271669H pinout,Pin out
This is one package pinout of K4R271669H,If you need more pinouts please download K4R271669H's pdf datasheet.

K4R271669H circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

Related Electronics Part Number

Related Keywords:

K4R271669H Pb-Free K4R271669H Cross Reference K4R271669H Schematic K4R271669H Distributor
K4R271669H Application Notes K4R271669H RoHS K4R271669H Circuits K4R271669H footprint
Hot categories