288Mbit RDRAM 512K X 18bit X 32s Banks

288Mbit RDRAM 512K x 18bit x 32s banks , K4R881869E The 288Mbit RDRAM devices are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The use of Rambus Signaling Level (RSL) technology permits up to 1200 MHz transfer rates while using conventional system and board design technologies. RDRAM devices are capable of sustained data transfers up to 0.883ns per two bytes (6.7ns per sixteen bytes). By Samsung Semiconductor, Inc.
K4R881869E 's PackagesK4R881869E 's pdf datasheet
K4R881869E-GCM8
K4R881869E-GCT9
K4R881869E-GCK8
K4R881869E-FCN1
K4R881869E-FCT9
K4R881869E-FCM8
K4R881869E-FCK8




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