2mx8 Sdram 1m X 8bit X 2 Banks Synchronous Dram Lvttl Semiconductor

The K4S160822D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 1,048,576 words by 8 bits, fabricated with SAMSUNGs high performance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system Clock I/O transactions are possible on every Clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance mem- ory system applications. By Samsung Semiconductor, Inc.
K4S160822D 's PackagesK4S160822D 's pdf datasheet



K4S160822D Pinout, Pinouts
K4S160822D pinout,Pin out
This is one package pinout of K4S160822D,If you need more pinouts please download K4S160822D's pdf datasheet.

K4S160822D circuits will be updated soon..., now you can download the pdf datasheet to check the circuits!

Related Electronics Part Number

Related Keywords:

K4S160822D Pb-Free K4S160822D Cross Reference K4S160822D Schematic K4S160822D Distributor
K4S160822D Application Notes K4S160822D RoHS K4S160822D Circuits K4S160822D footprint